The Fourth International Conference on Nitride Semiconductors

Venue: Adam\'s Mark Hotel

Location: Denver, Colorado, United States

Event Date/Time: Jul 16, 2001 End Date/Time: Jun 20, 2001
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Description

Preliminary Announcement and First Call for Papers

The Fourth International Conference on Nitride Semiconductors

Denver, Colorado USA
July 16-20, 2001
Sponsored by the Materials Research Society

SCOPE OF THE CONFERENCE
The Fourth International Conference on Nitride Semiconductors (ICNS-4) will be held in the USA at the Adam's Mark Hotel in Denver, Colorado on July 16-20, 2001. This conference series focuses on recent advances in GaN and related materials. It covers scientific and technological developments associated with these materials, their
processing and devices; for technological areas such as optoelectronics, high temperature electronics, etc. ICNS-4 will be chaired by Prof. Jacques Pankove. It follows the ICNS-1 held in Boston and Nagoya (1995); ICNS-2 in Tokushima, Japan (1997); and ICNS-3 in Montpellier, France (1999).

FORMAT OF CONFERENCE
The meeting will consist of invited and contributed oral presentations, as well as poster sessions. Given the size of previous meetings in this series, it is expected that this edition will contain parallel sessions in order to accommodate the increasing participation and the need for more in depth discussion.

OBJECTIVE
The objective of this Conference is to provide a forum for active nitride researchers to exchange their knowledge by presenting their latest results and by carrying out in-depth technical discussions. This conference follows the tradition of the three previous conferences and will focus on all aspects of nitride semiconductor systems, which include compounds involving AlInGaN, GaNAsP, AlSiCN and other materials
containing nitrogen as one of the major constituents.

TOPICAL AREAS
Contributions from all aspects of research on nitride semiconductors and their devices are solicited. The topical areas included in this meeting are as follows (but are not limited to):

Synthesis: substrates, precursors, bulk crystals, epitaxy,
doping, heterostructures, regrowth, alloys

Fundamental Science: band structure, modeling of physical properties, quantum size effect, strain effect, surface phenomena

Characterization: determination of the
structural, electrical, optical, etc. properties

Processing: etching (dry, wet), cleaving, high
reflection coatings, ohmic contacts, Schottky contacts

Devices: optoelectronics, high power, and high
temperature applications

PUBLICATION OF PAPERS
A full version of the papers presented at the conference are eligible for publication in a special issue of a journal. The manuscripts will be due six weeks before the conference date and will be subject to a separate review. We intend to publish the Proceedings within a few months after the meeting.

GENERAL INFORMATION
Location & Date:
ICNS-4 will be held at the Adam's Mark Hotel, Denver, Colorado, from July 16-20, 2001

Weather:
Denver is one of the sunniest cities in America, with an average of 300 days of bright sunshine a year. Mid-July is beautiful, with average daytime temperatures of 88°F/30°C, and comfortable evenings of 59°F/16°C.

Secretariat:
Materials Research Society

Registration:
Materials Research Society
506 Keystone Drive
Warrendale, Pennsylvania 15086 USA
Tel: 724-779-3003
Fax: 724-779-8313
Email: info@mrs.org

Language:
English is the official language of the Conference

Accommodations:
The Adam's Mark Hotel and the Holiday Inn, both in downtown Denver, have sleeping room blocks devoted to the ICNS4 Conference. Information on additional low-cost housing for students will be forthcoming.

Web site: www.mrs.org/meetings/icns-4/

Organizing Committee
J. I. Pankove, Chair Astralux, Boulder, USA
I. Akasaki Meijo U., Nagoya, Japan
R. D. Dupuis U. of Texas, Austin, USA
B. Monemar Linkoping U., Sweden
H. Morkoç Virginia Com. U., Richmond, USA
T. D. Moustakas Boston U., USA
F. A. Ponce Arizona State U., USA
C. Wood ONR, USA

International Advisory Committee
E. Calleja U. Politecnica Madrid, Spain
M. G. Craford HP/Agilent, San Jose, USA
R. Cingolani U. Lecce, Italy
S. Den Baars U.C. Santa Barbara, USA
V. Dmitriev TDI, Maryland, USA
L. Eastman Cornell U., USA
J. Edmond CREE, Durham, USA
C. T. Foxon U. Nottingham, UK
P. Gibart CNRS, Valbonne, France
B. Gil U. of Montpellier, France
F. Hasegawa U. of Tsukuba, Japan
A. Hoffmann Tech. U., Berlin, Germany
M. Ilegems EPFL, Switzerland
A. Khan U. of S. Carolina, USA
K. Kishino Sophia U., Japan
C. Litton AFOSR, USA
B. Meyer U. Giessen, Germany
S. Nakamura U.C. Santa Barbara, USA
K. Onabe Tokyo U., Japan
S. Porowski Unipress, Warsaw, Poland
H. Sakai U. Tokushima, Japan
M. Stutzmann Tech. U., Munich, Germany
J. J. Song Oklahoma State U., USA
S. Yoshida Saitama U., Japan

Finance & Exhibit Committee
R. D. Dupuis, Chair U. of Texas, Austin, USA

Technical Program Committee
C. Wood, Chair ONR, USA

Publications Committee
F. A. Ponce, Chair Arizona State U., USA

Local Arrangements Committee
J.T. Torvik, Chair Astralux, Boulder, USA





To receive future conference information, please return this card by October 1, 2000 to:

ICNS-4: c/o PAT HASTINGS
Materials Research Society
506 Keystone Drive
Warrendale, PA 15086 USA
E-mail: hastings@mrs.org

Venue

Adam's Mark Hotel, 1550 Court Place, Denver, Colorado United States of America 80202
Denver
Colorado
United States
MORE INFO ON THIS VENUE