The 11th European Workshop on MOVPE (EW-MOVPE XI)

Venue: Ecole Polytechnique Fédérale de Lausanne

Location: Lausanne, Switzerland

Event Date/Time: Jun 05, 2005 End Date/Time: Jun 08, 2005
Registration Date: Jun 05, 2005
Early Registration Date: Mar 31, 2005
Abstract Submission Date: Feb 15, 2005
Report as Spam


Scope and Topics:
EW-MOVPE workshops have become a traditional meeting point for the european scientific community involved in MOVPE - from academia as much as from industry. It is a forum where all topics relevant to MOVPE are addressed, ranging from surface science to device development, from basic growth mechanisms to production issues. Major topics therefore include:
Precursors & chemical sources
Growth and doping mecanisms
In-situ probes, real time process monitoring
Reactor modeling
Selective area epitaxy and non-planar growth
Low dimensional structures and devices
Gallium Arsenide, Indium Phosphide and Gallium Nitride materials and devices
Wide band gap materials (nitrides, II-VIs, ZnO)
Mid-infrared materials/gallium antimonide based materials
Safety issues
Ten previous workshops were succesfully held in Aachen (1987), St Andrews (1988), Montpellier (1989), Nijmegen (1991), Malmö (1993), Gent (1995), Berlin (1997), Prague (1999), Wrexham (2001) and Lecce (2003).
EW-MOVPE XI aims at perpetuating and strengthening this valuable tradition.


Additional Information

Invited Talks (preliminary list): Prof. Stephen D. Hersee, Center for High Technology Materials, University of New Mexico (USA) "Nanoheteroepitaxy: the use of compliant nanostructures to accommodate large lattice mismatch in semiconductor heterostructures" Prof. Simon Watkins, Simon Fraser University, Vancouver (Canada) "Growth of InP/antimonide heterostructures for electronic and optoelectronic device applications" Dr. Volker Haerle, OSRAM Opto Semiconductors, Regensburg (Germany) "Recent progress in GaInN based high brightness LEDs" Prof. Gyu-Chul YI, Pohang University of Science & Technology, POSTECH (Korea) "Catalyst-free metal-organic vapor phase epitaxy of ZnO nanorods and their nanodevice applications"