QUESTIONS15th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE)
Venue: Hyatt Regency
Location: Lake Tahoe, Nevada, United States
| Event Date/Time: May 23, 2010 | End Date/Time: May 28, 2010 |
| Registration Date: May 23, 2010 | |
| Early Registration Date: May 03, 2010 | |
| Abstract Submission Date: Jan 05, 2010 |
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Join others who share your passion at the 15th International Conference on Metal Organic Vapor Phase Epitaxy May 23-28, 2010 • Hyatt Regency, Lake Tahoe, Nevada for both formal and informal discussions, and compelling technical presentations.
This conference follows the tradition of previous conferences on metal organic vapor phase epitaxy (MOVPE) by presenting the latest advances in science, technology and applications of MOVPE and related growth techniques.
Take advantage of the $100 discounted advance registration fee through May 3, 2010!
For secure online registration or to complete the mail-in form, visit the ICMOVPE Web site.
Here’s a menu of the topics covered at this broad-based forum:
• Basic growth studies
• Surface physics and chemistry
• In-situ probes
• Gallium nitride based materials and devices
• Indium phosphide based materials
• Gallium arsenide based materials
• High brightness LEDs and solid state lighting
• Growth of device structures: LEDs, laser diodes, FETs
• Low dimensional structures, patterned growth and selective epitaxy
• Mid-infrared materials/gallium antimonide based materials
• New materials: II-V oxides dielectrics, ferroelectric
• Real time monitoring and process control
• Production and safety issues
• Dilute nitride semiconductors
• Growth and doping mechanisms
• Reactor modeling
Be aware that meeting attendees who require an international travel visa are strongly encouraged to plan ahead and begin the application process early. Visit the ICMOVPE-XV Visa Page for more information and to generate a visa letter.
This conference follows the tradition of previous conferences on metal organic vapor phase epitaxy (MOVPE) by presenting the latest advances in science, technology and applications of MOVPE and related growth techniques.
Take advantage of the $100 discounted advance registration fee through May 3, 2010!
For secure online registration or to complete the mail-in form, visit the ICMOVPE Web site.
Here’s a menu of the topics covered at this broad-based forum:
• Basic growth studies
• Surface physics and chemistry
• In-situ probes
• Gallium nitride based materials and devices
• Indium phosphide based materials
• Gallium arsenide based materials
• High brightness LEDs and solid state lighting
• Growth of device structures: LEDs, laser diodes, FETs
• Low dimensional structures, patterned growth and selective epitaxy
• Mid-infrared materials/gallium antimonide based materials
• New materials: II-V oxides dielectrics, ferroelectric
• Real time monitoring and process control
• Production and safety issues
• Dilute nitride semiconductors
• Growth and doping mechanisms
• Reactor modeling
Be aware that meeting attendees who require an international travel visa are strongly encouraged to plan ahead and begin the application process early. Visit the ICMOVPE-XV Visa Page for more information and to generate a visa letter.
